Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Materials and technology issues for SiGe heterojunction bipolar transistors
Materials and technology issues for SiGe heterojunction bipolar transistors
Materials and technology issues for SiGe heterojunction bipolar transistors
Ashburn, P. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 521-527
01.01.2001
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors
British Library Online Contents | 2000
|Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS
British Library Online Contents | 1996
|Modeling and simulation of SiGe layer stack creep in heterojunction bipolar transistors
British Library Online Contents | 1998
|Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors
British Library Online Contents | 1999
|Annealed Si~1~-~xC~x Emitter Silicon Heterojunction Bipolar Transistors
British Library Online Contents | 1998
|