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Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors
Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors
Base contact material issues of intergrated high-speed Si/SiGe heterojunction bipolar transistors
Hohaus, J. (Autor:in) / Schreiber, H.-U. (Autor:in)
MATERIALWISSENSCHAFT UND WERKSTOFFTECHNIK ; 31 ; 833-836
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Deutsch
DDC:
620.11
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