Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures
Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures
Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures
Teng, J. H. (Autor:in) / Dong, J. R. (Autor:in) / Chua, S. J. (Autor:in) / Thompson, D. A. (Autor:in) / Robinson, B. J. (Autor:in) / Lee, A. S. (Autor:in) / Hazell, J. (Autor:in) / Sproule, I. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 621-624
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films
British Library Online Contents | 2015
|British Library Online Contents | 2001
|British Library Online Contents | 2001
|Defect formation during laser induced intermixing of GaAs/AlGaAs multiple-quantum-well structures
British Library Online Contents | 1997
|Compressively strained Ge channels on relaxed SiGe buffer layers
British Library Online Contents | 2003
|