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Photoluminescence of AlGaAs alloy grown by LP-MOVPE at different temperatures using TBA in N2 ambient
Photoluminescence of AlGaAs alloy grown by LP-MOVPE at different temperatures using TBA in N2 ambient
Photoluminescence of AlGaAs alloy grown by LP-MOVPE at different temperatures using TBA in N2 ambient
Tang, X. H. (Autor:in) / Zhu, J. Y. (Autor:in) / Chan, Y. C. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 651-654
01.01.2001
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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