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Photoluminescence of AlGaAs alloy grown by LP-MOVPE at different temperatures using TBA in N2 ambient
Photoluminescence of AlGaAs alloy grown by LP-MOVPE at different temperatures using TBA in N2 ambient
Photoluminescence of AlGaAs alloy grown by LP-MOVPE at different temperatures using TBA in N2 ambient
Tang, X. H. (author) / Zhu, J. Y. (author) / Chan, Y. C. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 651-654
2001-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
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