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Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
Templier, F. (Autor:in) / Ferret, P. (Autor:in) / Di Cioccio, L. (Autor:in) / Collard, E. (Autor:in) / Lhorte, A. (Autor:in) / Billon, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1161-1164
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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