Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Danielsson, O. / Jonsson, S. / Henry, A. et al. | British Library Online Contents | 2002

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Kojima, K. / Takahashi, T. / Ishida, Y. et al. | British Library Online Contents | 2004

Surface studies of SiC epitaxial layers grown by chemical vapor deposition

Kodigala, S. R. / Bhat, I. / Chow, T. P. et al. | British Library Online Contents | 2006

Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition

Neyret, E. / Ferro, G. / Juillaguet, S. et al. | British Library Online Contents | 1999

Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition

Wu, C. C. / Lin, K. C. / Chan, S. H. et al. | British Library Online Contents | 1993