Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Danielsson, O. / Jonsson, S. / Henry, A. et al. | British Library Online Contents | 2002

Surface studies of SiC epitaxial layers grown by chemical vapor deposition

Kodigala, S. R. / Bhat, I. / Chow, T. P. et al. | British Library Online Contents | 2006

Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition

Wu, C. C. / Lin, K. C. / Chan, S. H. et al. | British Library Online Contents | 1993

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Nishio, J. / Kushibe, M. / Masahara, K. et al. | British Library Online Contents | 2002

Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

Hallstedt, J. / Parent, A. / Ostling, M. et al. | British Library Online Contents | 2005