Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces
In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces
In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces
Jikimoto, T. (Autor:in) / Tsuchida, H. (Autor:in) / Kamata, I. (Autor:in) / Izumi, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 709-712
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Oxidation of clean and H-terminated SiC surfaces
British Library Online Contents | 1997
|Initial stage of oxidation of hydrogen-terminated silicon surfaces
British Library Online Contents | 1996
|Initial oxidation of H-terminated Si(111) surfaces studied by HREELS
British Library Online Contents | 1997
|Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces
British Library Online Contents | 1996
|British Library Online Contents | 2008
|