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Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction
Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction
Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction
Nemcsics, A. (Autor:in)
APPLIED SURFACE SCIENCE ; 190 ; 294-297
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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