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    Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction

    New search for: Nemcsics, A.

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    Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction

    New search for: Nemcsics, A.

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    Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction

    New search for: Nemcsics, A.

    Access

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    Document information
    Title:

    Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction

    Contributors:

    Nemcsics, A. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 190 ; 294-297

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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