Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer
Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer
Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer
Kampen, T. U. (Autor:in) / Park, S. (Autor:in) / Zahn, D. R. (Autor:in)
APPLIED SURFACE SCIENCE ; 190 ; 461-466
01.01.2002
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Schottky contacts on passivated GaAs(100) surfaces: barrier height and reactivity
British Library Online Contents | 2004
|Barrier heights of GaN Schottky contacts
British Library Online Contents | 1997
|Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation
British Library Online Contents | 2008
|Barrier heights of organic modified Schottky contacts: theory and experiment
British Library Online Contents | 2004
|Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes
British Library Online Contents | 2007
|