Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K

Korucu, D. / Efeoglu, H. / Turut, A. et al. | British Library Online Contents | 2012

Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77K

Herrero, A. M. / Gerger, A. M. / Gila, B. P. et al. | British Library Online Contents | 2007

Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes

Acar, S. / Karadeniz, S. / Tugluoglu, N. et al. | British Library Online Contents | 2004

The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

Dokme, I. / Altindal, S. / Bulbul, M. M. | British Library Online Contents | 2006

Schottky contacts on passivated GaAs(100) surfaces: barrier height and reactivity

Kampen, T. / Schuller, A. / Zahn, D. R. et al. | British Library Online Contents | 2004