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Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy
Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy
Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy
Zhu, C. F. (Autor:in) / Xie, J. Q. (Autor:in) / Fong, W. K. (Autor:in) / Surya, C. (Autor:in)
MATERIALS LETTERS ; 57 ; 2413-2416
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
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