Si:Er:O layers grown by molecular beam epitaxy: structural, electrical and optical properties

Scalese, S. / Franzo, G. / Mirabella, S. et al. | British Library Online Contents | 2001

Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy

Zhu, C. F. / Xie, J. Q. / Fong, W. K. et al. | British Library Online Contents | 2003

Optimization of compositionally graded InxGa1-xP metamorphic buffer layers grown by solid source molecular beam epitaxy

Yuan, K. / Radhakrishnan, K. / Zheng, H. Q. et al. | British Library Online Contents | 2001

The effect of buffer layers on structural quality of Si~0~.~7Ge~0~.~3 layers grown on Si(001) substrates by molecular beam epitaxy

Obata, T. / Komeda, K. / Nakao, T. et al. | British Library Online Contents | 1997

Investigation of whisker defects on molecular beam epitaxy grown GaAs layers

Kadhim, N. J. / Mukherjee, D. | British Library Online Contents | 1996