First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges: Fid-Bau Portal

First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges

Doi, K. / Nakamura, K. / Tachibana, A.

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First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges

Doi, K. / Nakamura, K. / Tachibana, A.

First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges

Doi, K. / Nakamura, K. / Tachibana, A.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Titel:

First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges

Beteiligte:

Doi, K. (Autor:in) / Nakamura, K. (Autor:in) / Tachibana, A. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 216 ; 463-470

Erscheinungsdatum:

01.01.2003

Format / Umfang:

8 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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