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    First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges

    New search for: Doi, K.
    New search for: Nakamura, K.
    New search for: Tachibana, A.

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    First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges

    New search for: Doi, K.
    New search for: Nakamura, K.
    New search for: Tachibana, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges

    New search for: Doi, K.
    New search for: Nakamura, K.
    New search for: Tachibana, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    First-principle theoretical study on the electronic properties of SiO2 models with hydrogenated impurities and charges

    Contributors:

    Doi, K. (author) / Nakamura, K. (author) / Tachibana, A. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 216 ; 463-470

    Publication date:

    2003-01-01

    Size:

    8 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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