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A field effect transistor using highly nitrogen-doped CVD diamond for power device applications
A field effect transistor using highly nitrogen-doped CVD diamond for power device applications
A field effect transistor using highly nitrogen-doped CVD diamond for power device applications
Yokoyama, Y. (Autor:in) / Li, X. (Autor:in) / Sheng, K. (Autor:in) / Mihaila, A. (Autor:in) / Traikovic, T. (Autor:in) / Udrea, F. (Autor:in) / Amaratunga, G. A. (Autor:in) / Okano, K. (Autor:in)
APPLIED SURFACE SCIENCE ; 216 ; 483-489
01.01.2003
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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