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A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

Yokoyama, Y. / Li, X. / Sheng, K. / Mihaila, A. / Traikovic, T. / Udrea, F. / Amaratunga, G. A. / Okano, K.

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A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

Yokoyama, Y. / Li, X. / Sheng, K. / Mihaila, A. / Traikovic, T. / Udrea, F. / Amaratunga, G. A. / Okano, K.

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

Yokoyama, Y. / Li, X. / Sheng, K. / Mihaila, A. / Traikovic, T. / Udrea, F. / Amaratunga, G. A. / Okano, K.

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Check availability in my library

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Document information

Title:

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

Contributors:

Yokoyama, Y. (author) / Li, X. (author) / Sheng, K. (author) / Mihaila, A. (author) / Traikovic, T. (author) / Udrea, F. (author) / Amaratunga, G. A. (author) / Okano, K. (author)

Published in:

APPLIED SURFACE SCIENCE ; 216 ; 483-489

Publication date:

2003-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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