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Digital devices based on tunnel-resonant transport of charge carriers in periodic Si/CaF2 nanostructures
Digital devices based on tunnel-resonant transport of charge carriers in periodic Si/CaF2 nanostructures
Digital devices based on tunnel-resonant transport of charge carriers in periodic Si/CaF2 nanostructures
Berashevich, J. A. (Autor:in) / Danilyuk, A. L. (Autor:in) / Borisenko, V. E. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 101 ; 300-304
01.01.2003
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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