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Digital devices based on tunnel-resonant transport of charge carriers in periodic Si/CaF2 nanostructures
Digital devices based on tunnel-resonant transport of charge carriers in periodic Si/CaF2 nanostructures
Digital devices based on tunnel-resonant transport of charge carriers in periodic Si/CaF2 nanostructures
Berashevich, J. A. (author) / Danilyuk, A. L. (author) / Borisenko, V. E. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 101 ; 300-304
2003-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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