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Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
Syvajarvi, M. (Autor:in) / Yakimova, R. (Autor:in) / Ciechonski, R. R. (Autor:in) / Davydov, D. (Autor:in) / Lebedev, A. A. (Autor:in) / Janzen, E. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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