Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers: Fid-Bau Portal

Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers

Syvajarvi, M. / Yakimova, R. / Ciechonski, R. R. / Davydov, D. / Lebedev, A. A. / Janzen, E.

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Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers

Syvajarvi, M. / Yakimova, R. / Ciechonski, R. R. / Davydov, D. / Lebedev, A. A. / Janzen, E.

Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers

Syvajarvi, M. / Yakimova, R. / Ciechonski, R. R. / Davydov, D. / Lebedev, A. A. / Janzen, E.

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Title:

Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers

Contributors:

Syvajarvi, M. (author) / Yakimova, R. (author) / Ciechonski, R. R. (author) / Davydov, D. (author) / Lebedev, A. A. (author) / Janzen, E. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 169-172

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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