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Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
Dannefaer, S. (Autor:in) / Avalos, V. (Autor:in) / Syvajarvi, M. (Autor:in) / Yakimova, R. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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