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Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positron
Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positron
Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positron
Itoh, H. (Autor:in) / Yoshikawa, M. (Autor:in) / Nashiyama, I. (Autor:in) / Wei, L. (Autor:in) / Taguchi, T.
01.01.1993
501 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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