Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
Reshanov, S. A. (Autor:in) / Klettke, O. (Autor:in) / Pensl, G. (Autor:in) / Choyke, W. J. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth and Electrical Characterization of 4H-SiC Epilayers
British Library Online Contents | 2007
|Optical properties of Pr implanted GaN epilayers and AlxGa1-xN alloys
British Library Online Contents | 2001
|British Library Online Contents | 1998
|Annealing behavior of luminescence from erbium-implanted GaN films
British Library Online Contents | 2001
|Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC Epilayers
British Library Online Contents | 2002
|