Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450-650degreeC under hydrostatic pressure
Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450-650degreeC under hydrostatic pressure
Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450-650degreeC under hydrostatic pressure
Surma, B. (Autor:in) / Londos, C. A. (Autor:in) / Emtsev, V. V. (Autor:in) / Misiuk, A. (Autor:in) / Bukowski, A. (Autor:in) / Potsidi, M. S. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 102 ; 339-343
01.01.2003
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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