Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecular beam epitaxy

Song, J. D. / Ok, Y. W. / Kim, J. M. et al. | British Library Online Contents | 2001

Improvement of the crystallinity of a Cd~xZn~1~-~xTe epitaxial film grown on a GaAs substrate using a ZnTe buffer layer

Kim, T. W. / Park, H. L. / Lee, J. Y. | British Library Online Contents | 1997

Study of p-type AlGaAs film grown on sapphire substrate using GaAs buffer layer

Kim, J. H. / Lee, H. J. | British Library Online Contents | 2014

Surface Morphology of GaN Epilayer with Si~xN~1~-~x Buffer Layer Grown by Ammonia-source MBE

Shimizu, M. / Ohkita, H. / Suzuki, A. et al. | British Library Online Contents | 2002

Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)

Wei, M. / Wang, X. / Pan, X. et al. | British Library Online Contents | 2011