Electronic stopping powers for fluorine ions in 19F+-implanted AgGaS2 crystal

Liu, X. / Xia, Y. / Lu, Q. et al. | British Library Online Contents | 2004

Study on range distribution parameters for fluorine ion implantation in KTiOAsO4 crystals at low velocity

Liu, X. / Xia, Y. / Lu, Q. et al. | British Library Online Contents | 2005

Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors

Wen-Chen, Z. / Xiao-Xuan, W. / Qing, Z. et al. | British Library Online Contents | 2006

Donor-acceptor pairs and excitons recombinations in AgGaS2

Marceddu, M. / Anedda, A. / Carbonaro, C. M. et al. | British Library Online Contents | 2006

First-principles calculations of the structural, electronic and optical properties of CuGaS2 and AgGaS2

Laksari, S. / Chahed, A. / Abbouni, N. et al. | British Library Online Contents | 2006