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Boron diffusion in silicon: the anomalies and control by point defect engineering
Boron diffusion in silicon: the anomalies and control by point defect engineering
Boron diffusion in silicon: the anomalies and control by point defect engineering
Shao, L. (Autor:in) / Liu, J. (Autor:in) / Chen, Q. Y. (Autor:in) / Chu, W. K. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING R REPORTS -LAUSANNE- ; 42 ; 65-114
01.01.2003
50 pages
Aufsatz (Zeitschrift)
Englisch
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