Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier
The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier
The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier
Hua, W. C. (Autor:in) / Yang, T. Y. (Autor:in) / Liu, C. W. (Autor:in)
APPLIED SURFACE SCIENCE ; 224 ; 425-428
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A 4.4 to 5GHz SiGe low noise amplifier
British Library Online Contents | 2004
|SiGe based low noise amplifier for WLAN applications
British Library Online Contents | 2004
|Comparison of state-of-the-art bipolar compact models for SiGe-HBTs
British Library Online Contents | 2004
|Materials and technology issues for SiGe heterojunction bipolar transistors
British Library Online Contents | 2001
|High-frequency noise in SiGe HBTs
British Library Online Contents | 2003
|