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Device advantage of the dislocation-free pressure grown GaN substrates
Device advantage of the dislocation-free pressure grown GaN substrates
Device advantage of the dislocation-free pressure grown GaN substrates
Bockowski, M. (Autor:in) / Porowski, S. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 347-350
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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