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Free standing c-GaN films grown by low-pressure metalorganic chemical vapor deposition on GaP (100) substrates
Free standing c-GaN films grown by low-pressure metalorganic chemical vapor deposition on GaP (100) substrates
Free standing c-GaN films grown by low-pressure metalorganic chemical vapor deposition on GaP (100) substrates
Arias-Cerón, J.S. (Autor:in) / Vilchis, H. (Autor:in) / Hurtado-Castañeda, D.M. (Autor:in) / Sánchez-R, V.M. (Autor:in)
Materials science in semiconductor processing ; 74 ; 98-101
01.01.2018
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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