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Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy
Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy
Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy
Oga, R. (Autor:in) / Lee, W. S. (Autor:in) / Yoshida, Y. (Autor:in) / Fujiwara, Y. (Autor:in) / Takeda, Y. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 477-480
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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