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    Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy

    New search for: Oga, R.
    New search for: Lee, W. S.
    New search for: Yoshida, Y.
    New search for: Fujiwara, Y.
    New search for: Takeda, Y.

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    Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy

    New search for: Oga, R.
    New search for: Lee, W. S.
    New search for: Yoshida, Y.
    New search for: Fujiwara, Y.
    New search for: Takeda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy

    New search for: Oga, R.
    New search for: Lee, W. S.
    New search for: Yoshida, Y.
    New search for: Fujiwara, Y.
    New search for: Takeda, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy

    Contributors:

    Oga, R. (author) / Lee, W. S. (author) / Yoshida, Y. (author) / Fujiwara, Y. (author) / Takeda, Y. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 477-480

    Publication date:

    2003-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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