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Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
Cai, L. C. (Autor:in) / Chen, H. (Autor:in) / Bao, C. L. (Autor:in) / Huang, Q. (Autor:in) / Zhou, J. M. (Autor:in)
JOURNAL OF MATERIALS SCIENCE ; 39 ; 2637-2640
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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