Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure
Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure
Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) heterostructure
Wang, G. W. (Autor:in) / Ru, G. P. (Autor:in) / Qu, X. P. (Autor:in) / Li, B. Z. (Autor:in)
MATERIALS LETTERS ; 58 ; 2082-2086
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure
British Library Online Contents | 2014
|Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure
British Library Online Contents | 2014
|Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
British Library Online Contents | 2005
|Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer
British Library Online Contents | 2017
|Stability of Molybdenum Schottky Contact to Silicon Carbide
British Library Online Contents | 2001
|