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Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
Kim, D. H. (Autor:in) / Na, H. J. (Autor:in) / Jung, S. Y. (Autor:in) / Song, I. B. (Autor:in) / Um, M. Y. (Autor:in) / Song, H. K. (Autor:in) / Jeong, J. K. (Autor:in) / Lee, J. B. (Autor:in) / Kim, H. J. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1001-1004
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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