Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments: Fid-Bau Portal

Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments

Kim, D. H. / Na, H. J. / Jung, S. Y. / Song, I. B. / Um, M. Y. / Song, H. K. / Jeong, J. K. / Lee, J. B. / Kim, H. J.

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Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments

Kim, D. H. / Na, H. J. / Jung, S. Y. / Song, I. B. / Um, M. Y. / Song, H. K. / Jeong, J. K. / Lee, J. B. / Kim, H. J.

Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments

Kim, D. H. / Na, H. J. / Jung, S. Y. / Song, I. B. / Um, M. Y. / Song, H. K. / Jeong, J. K. / Lee, J. B. / Kim, H. J.

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Title:

Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments

Contributors:

Kim, D. H. (author) / Na, H. J. (author) / Jung, S. Y. (author) / Song, I. B. (author) / Um, M. Y. (author) / Song, H. K. (author) / Jeong, J. K. (author) / Lee, J. B. (author) / Kim, H. J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1001-1004

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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