Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Mechanical and piezoresistive properties of InAs/AlGaSb cantilevers
Mechanical and piezoresistive properties of InAs/AlGaSb cantilevers
Mechanical and piezoresistive properties of InAs/AlGaSb cantilevers
Yamaguchi, H. (Autor:in) / Miyashita, S. (Autor:in) / Hirayama, Y. (Autor:in)
APPLIED SURFACE SCIENCE ; 237 ; 645-649
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures
British Library Online Contents | 1997
|Engineering Index Backfile | 1936
|GaSb/AlGaSb Compound Semiconductors Grown by MOCVD for Optoelectronic Applications
British Library Online Contents | 2006
|New donor doping sources for molecular beam epitaxy of AlGaSb and AlGaAs
British Library Online Contents | 1996
|Dynamic Response of Cantilevers
Wiley | 2018
|