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p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing
p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing
p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing
Park, S. H. (Autor:in) / Kang, T. W. (Autor:in) / Kim, T. W. (Autor:in)
JOURNAL OF MATERIALS SCIENCE ; 39 ; 6353-6355
01.01.2004
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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