Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
Park, S. H. (Autor:in) / Kang, T. W. (Autor:in) / Kim, T. W. (Autor:in)
JOURNAL OF MATERIALS SCIENCE ; 39 ; 3217-3219
01.01.2004
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Precipitates in GaN epilayers grown on sapphire substrates
British Library Online Contents | 1998
|Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
British Library Online Contents | 1998
|p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing
British Library Online Contents | 2004
|British Library Online Contents | 2001
|Orientation of cracks in AlGaN epilayers with sapphire substrates
British Library Online Contents | 2003
|