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MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown
MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown
MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown
Gerardin, S. (Autor:in) / Cester, A. (Autor:in) / Paccagnella, A. (Autor:in) / Ghidini, G. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 175-180
01.01.2004
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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British Library Online Contents | 2005
|Values of Fowler-Nordheim field emission functions -- V(y), t(y), and s(y)
Engineering Index Backfile | 1966
|