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Characterization of program and erase properties using Fowler-Nordheim tunneling in the 30nm silicon-oxide-nitride-oxide-silicon transistor
Characterization of program and erase properties using Fowler-Nordheim tunneling in the 30nm silicon-oxide-nitride-oxide-silicon transistor
Characterization of program and erase properties using Fowler-Nordheim tunneling in the 30nm silicon-oxide-nitride-oxide-silicon transistor
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 513-516
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 2004
|Vertical SiGe-based silicon-on-nothing (SON) technology for sub-30nm MOS devices
British Library Online Contents | 2005
|Values of Fowler-Nordheim field emission functions -- V(y), t(y), and s(y)
Engineering Index Backfile | 1966
|Electron tunneling through chemical oxide of silicon
British Library Online Contents | 1996
|