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The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique
The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique
The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique
Guessasma, S. (Autor:in) / Chahdi, M. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 411-417
01.01.2004
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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