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    The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique

    New search for: Guessasma, S.
    New search for: Chahdi, M.

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    The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique

    New search for: Guessasma, S.
    New search for: Chahdi, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique

    New search for: Guessasma, S.
    New search for: Chahdi, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique

    Contributors:

    Guessasma, S. (author) / Chahdi, M. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 411-417

    Publication date:

    2004-01-01

    Size:

    7 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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