Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Jeong, Y. / Sakuraba, M. / Murota, J. | British Library Online Contents | 2005

Electrical Characteristics of B Doped Ge Film Epitaxially Grown on Si Using Ultraclean Chemical Vapor Deposition

Goto, K. / Murota, J. / Ono, S. | British Library Online Contents | 1993

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition

Tanno, H. / Sakuraba, M. / Tillack, B. et al. | British Library Online Contents | 2008

Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition

Wu, C. C. / Lin, K. C. / Chan, S. H. et al. | British Library Online Contents | 1993

W delta doping in Si(1 0 0) using ultraclean low-pressure CVD

Kanaya, T. / Sakuraba, M. / Murota, J. | British Library Online Contents | 2003