Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition

Jeong, Y. / Sakuraba, M. / Murota, J. | British Library Online Contents | 2005

Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition

Kurosawa, T. / Komatsu, T. / Sakuraba, M. et al. | British Library Online Contents | 2005

Crystal structure and dielectric property of epitaxially grown (Ba, Sr)TiO~3 thin film prepared by molecular chemical vapor deposition

Funakubo, H. / Takeshima, Y. / Nagano, D. et al. | British Library Online Contents | 1998

Structural properties of epitaxially grown perfluoro n-alkane thin films prepared by vapor deposition

Ishida, K. / Horiuchi, T. / Kai, S. et al. | British Library Online Contents | 1996

Structural properties of epitaxially grown perfluoro n-alkane thin films prepared by vapor deposition

Ishida, K. / Horiuchi, T. / Kai, S. et al. | British Library Online Contents | 1996