Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD
Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD
Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD
Wada, K. (Autor:in) / Kimoto, T. (Autor:in) / Nishikawa, K. (Autor:in) / Matsunami, H. (Autor:in) / Nipoti, R. / Poggi, A. / Scorzoni, A.
01.01.2005
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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