Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD

Wada, K. / Kimoto, T. / Nishikawa, K. et al. | British Library Online Contents | 2005

Modelling of layer epitaxial growth: surface morphology and growth mode transitions

Trofimov, V. I. / Trofimov, I. V. / Kim, J. I. | British Library Online Contents | 2005

4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness

Aigo, T. / Sawamura, M. / Fujimoto, T. et al. | British Library Online Contents | 2006

Short-Length Step Morphology on 4^o Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate

Momose, K. / Odawara, M. / Tajima, Y. et al. | British Library Online Contents | 2010

Surface Morphology Evolution after Epitaxial Growth on 4^o Off-Axis 4H-SiC Substrate

Jegenyes, N. / Souliere, V. / Cauwet, F. et al. | British Library Online Contents | 2012